![]() |
|
Monday, December 12, 2021
Tomsk time: 12:55
|
DOWNLOAD FLYER ABOUT PIN DIODE PROCESS
The QPIN process is based on a vertical GaAs PIN diode and enables to design different types of passive microwave devices:
- Switches
- Limiters
- Attenuators
- Phase shifters
- Vertical GaAs PIN diode
- Minimal diode junction capacitance is 12 fF
- Multi-level frontside Au metallization
- NiCr Thin Film Resistors
- SiN MIM capacitors
- Grounding vias
- Backside Au metallization
Micran’s Internal III-V Foundry performs production control which can provide space grade MMICs
Parameter | Value | Units |
RF resistance RRF (F=2 GHz, IF=10 mA) | 3.8 | Ohm |
Carrier lifetime Ʈ | 1.5 | ns |
Switching speed TSW | 3.0 | ns |
Breakdown voltage VBD (IR=10 uA) | 37 | V |
Forward voltage VF (IF=10 mA) | 1.35 | V |
Junction capacitance CJ (VDiode=0 V) | 19 | fF |
Parasitic capacitance CP | 5 | fF |
DOWNLOAD FLYER ABOUT SCHOTTKY BARRIER DIODE PROCESS
The core of the QSBD process is a vertical GaAs Schottky barrier diode with high reliability and superb performance. Various types of passive microwave devices can be designed based on the QSBD process:
- Limiters
- Mixers
- Multipliers
- Detectors
- Vertical GaAs Schottky barrier diode
- Minimal diode junction capacitance is 20 fF
- Multi-level frontside Au metallization
- NiCr Thin Film Resistors
- SiN MIM capacitors
- SiN passivation
- Grounding vias
- Backside Au metallization
Micran’s Internal III-V Foundry performs production control which can provide space grade MMICs.
Parameter | Value | Units |
Ideality factor n | 1.8 | - |
Saturation current I0 | 1.5x10-15 | A |
Series resistance RS [ RS= RDiode- RJunction(IF =10mA)] | 2.0 | Ohm |
Breakdown voltage VBD (IR=10 uA) | 9.5 | V |
Turn on voltage VON (IF=20 uA) | 0.62 | V |
Junction capacitance CJ (VDiode=0 V) | 23 | fF |
Parasitic capacitance CP | 5 | fF |
DOWNLOAD FLYER ABOUT ZERO BIAS DIODE PROCESS
The QZBD process is based on a vertical GaAs zero bias diode. This process is suited primarily for ultra-wideband, wide dynamic range power detectors with no DC bias required. Following types of passive microwave devices can be designed based on the QZBD process:
- Zero bias power detectors
- Mixers
- Multipliers
- Vertical GaAs zero bias diode
- Minimal diode junction capacitance is 15 fF
- Multi-level frontside Au metallization
- NiCr Thin Film Resistors
- SiN MIM capacitors
- SiN passivation
- Grounding vias
- Backside Au metallization
Micran’s Internal III-V Foundry performs production control which can provide space grade MMICs.
Parameter | Value | Units |
Video resistance RV | 1.8 | KOhm |
Voltage sensitivity G (wideband matching in 50-Ohm transmission line) | 500 | mV/mW |
Tangential sensitivity TSS | -60 | dBm |
Breakdown voltage VBD (IR=5 mA) | 4 | V |
Turn on voltage VON (IF=20 uA) | 0.03 | V |
Junction capacitance CJ | 24 | fF |
Parasitic capacitance CP | 5 | fF |
Contact Us
Reception:
sales@micran.com Phone: +7 3822 900-029 Fax: +7 3822 423-615 Mailing address: Kirova Ave., 51 d, Tomsk, Russia, 634041 |
||