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Design center
Custom MMICs
Multifunctional circuits
Attenuators
Switches
Phase shifters
Limiters
Amplifiers
Mixers
Power detectors
Discrete components
RF Multiplier
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QPIN: GaAs PIN Diode process

DOWNLOAD FLYER ABOUT PIN DIODE PROCESS

The QPIN process is based on a vertical GaAs PIN diode and enables to design different types of passive microwave devices:

  • Switches
  • Limiters
  • Attenuators
  • Phase shifters
 
Process features 
  • Vertical GaAs PIN diode
  • Minimal diode junction capacitance is 12 fF
  • Multi-level frontside Au metallization
  • NiCr Thin Film Resistors
  • SiN MIM capacitors
  • Grounding vias
  • Backside Au metallization

Micran’s Internal III-V Foundry performs production control which can provide space grade MMICs

 
GaAs PIN Diode parameters (15 um diameter)
 
Parameter Value Units
RF resistance RRF (F=2 GHz, IF=10 mA) 3.8 Ohm
Carrier lifetime Ʈ 1.5 ns
Switching speed TSW 3.0 ns
Breakdown voltage VBD (IR=10 uA) 37 V
Forward voltage VF (IF=10 mA) 1.35 V
Junction capacitance CJ (VDiode=0 V) 19 fF
Parasitic capacitance CP 5 fF
 
QSBD: GaAs Schottky Barrier Diode process

DOWNLOAD FLYER ABOUT SCHOTTKY BARRIER DIODE PROCESS

The core of the QSBD process is a vertical GaAs Schottky barrier diode with high reliability and superb performance. Various types of passive microwave devices can be designed based on the QSBD process:

  • Limiters
  • Mixers
  • Multipliers
  • Detectors
 
Process features 
  • Vertical GaAs Schottky barrier diode
  • Minimal diode junction capacitance is 20 fF
  • Multi-level frontside Au metallization
  • NiCr Thin Film Resistors
  • SiN MIM capacitors
  • SiN passivation
  • Grounding vias
  • Backside Au metallization

Micran’s Internal III-V Foundry performs production control which can provide space grade MMICs.

 
GaAs Shottky Barrier Diode parameters (6 um diameter)
 
Parameter Value Units
Ideality factor n 1.8 -
Saturation current I0 1.5x10-15 A
Series resistance RS [ RS= RDiode- RJunction(IF =10mA)] 2.0 Ohm
Breakdown voltage VBD (IR=10 uA) 9.5 V
Turn on voltage VON (IF=20 uA) 0.62 V
Junction capacitance CJ (VDiode=0 V) 23 fF
Parasitic capacitance CP 5 fF
QZBD: GaAs Zero Bias Diode process

DOWNLOAD FLYER ABOUT ZERO BIAS DIODE PROCESS

The QZBD process is based on a vertical GaAs zero bias diode. This process is suited primarily for ultra-wideband, wide dynamic range power detectors with no DC bias required. Following types of passive microwave devices can be designed based on the QZBD process:

  • Zero bias power detectors
  • Mixers
  • Multipliers
 
Process features 
  • Vertical GaAs zero bias diode
  • Minimal diode junction capacitance is 15 fF
  • Multi-level frontside Au metallization
  • NiCr Thin Film Resistors
  • SiN MIM capacitors
  • SiN passivation
  • Grounding vias
  • Backside Au metallization

Micran’s Internal III-V Foundry performs production control which can provide space grade MMICs.

 
GaAs Zero Bias Diode parameters (6 um diameter)
 
Parameter Value Units
Video resistance RV 1.8 KOhm
Voltage sensitivity G (wideband matching in 50-Ohm transmission line) 500 mV/mW
Tangential sensitivity TSS -60 dBm
Breakdown voltage VBD (IR=5 mA) 4 V
Turn on voltage VON (IF=20 uA) 0.03 V
Junction capacitance CJ 24 fF
Parasitic capacitance CP 5 fF
 
 


 


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